View 28C256TRPDS12_8187326.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 memory all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301- www.maxwell.com 256k eeprom (32k x 8-bit) 28c256t ?2001 maxwell technologies all rights reserved. eeprom 12.19.01 rev 5 1000584 f eatures : ?r ad -p ak ? radiation-hardened against natural space radia- tion ? total dose hardness: - > 100 krad (si), dependent upon space mission ? excellent single event effects: - sel th let: > 120 mev/mg/cm 2 - seu th let (read mode): > 90 mev/mg/cm 2 - seu th let (write mode): > 18 mev/mg/cm 2 ? package: - 28 pin r ad -p ak ? flat pack - 28 pin r ad -p ak ? dip - jedec approved byte wide pinout ? high speed: - 120, 150 ns maximum access times available ? high endurance: - 10,000 erase/write (in page mode), 10-year data retention ? page write mode: - 1 to 64 bytes ? low power dissipation: - 15 ma active current (cycle = 1 s) - 20 a standby current (ce = v cc ) d escription : maxwell technologies? 28c 256t high density 256k-bit eeprom microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mission. the 28c256t is capable of in-syste m electrical byte and page pro- grammability. it has a 64-byte page programming function to make its erase and write operati ons faster. it also features data polling to indicate the completion of erase and program- ming operations. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class s. oe, ce, and we logic y decoder x decoder data latch input/output buffers y-gating cell matrix identification oe we ce address inputs v cc gnd data inputs/outpu t i/o0 - i/o7 logic diagram
memory 2 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 *refer to diagram on page 1 for pin relationship. t able 1. 28c256t p inout d escription p in s ymbol d escription *10-3, 25, 24, 21, 23, 2, 26, 1 a0-a14 address 11-13, 15-19 i/o0-i/o7 input/output 22 oe output enable 20 ce chip enable 27 we write enable 28 v cc power supply 14 v ss ground t able 2. 28c256t a bsolute m aximum r atings p arameter s ymbol m in m ax u nits supply voltage (relative to v ss )v cc -0.6 7.0 v input voltage (relative to v ss )v in -0.5 1 1. v in = -3.0 v for pulse width > 50 ns. 7.0 v operating temperature range 2 2. including electrical charac teristics and data retention. t opr -55 125 c storage temperature range t stg -65 150 c t able 3. 28c256t d elta l imits p arameter v ariation i cc 1 10% i cc 2 10% i cc 3a 10% i cc 3b 10%
memory 3 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 t able 4. 28c256t r ecommended o perating c onditions p arameter s ymbol m in m ax u nits supply voltage v cc 4.5 5.5 v input voltage v il v ih v h -0.3 1 2.2 v cc -0.5 1. v il min= -1.0v for pulse width < 50 ns. 0.8 v cc +0.3 v cc +1 v v v thermal impedance ? flat package jc -- 0.87 c/w thermal impedance ? dip package jc -- 0.86 c/w operating temperature range t opr -55 125 c t able 5. 28c256t c apacitance (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nits input capacitance: v in = 0v 1 1. guaranteed by design. c in -- 6 pf output capacitance: v out = 0v 1 c out -- 12 pf t able 6. 28c256t dc e lectrical c haracteristics (v cc = 5 v 10%, t a = -55 to +125 c unless otherwise specified ) p arameter c onditions s ymbol m in m ax u nits input leakage current v cc = 5.5 v, v in = 5.5 v i li -- 2 ua output leakage current v cc = 5.5 v, v out = 5.5 v/0.4 v i lo -- 2 ua standby v cc current ce = v cc i cc1 -- 20 ua ce = v ih i cc2 -- 1 ma operating v cc current i out = 0 ma duty = 100% v cc = 5.5 v cycle = 1 us i cc3 -- 15 ma i out = 0ma duty = 100% v cc = 5.5 v cycle = 150 ns -- 50 input low voltage v il -- 0.8 v input high voltage v ih 2.2 -- v v h v cc -0.5 -- v output low voltage i lo = 2.1 ma v ol -- 0.4 v output high voltage i oh = -400 ua v oh 2.4 -- v
memory 4 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 t able 7. 28c256t ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v 10%, t a = -55 to 125 c unless otherwise specified ) 1. test conditions: input pulse levels - 0v to 3v; input rise and fall times < 20 ns; output load - 1 ttl gate + 100 pf (including scope and jig); reference levels for measuring timing - 0.8v/1.8v . p arameter s ymbol m in m ax u nits address access time ce = oe = v il , we = v ih -120 -150 t acc -- -- 120 150 ns ce to output delay oe = v il , we = v ih -120 -150 t ce -- -- 120 150 ns oe to output delay ce = v il , we = v ih -120 -150 t oe 0 0 50 75 ns output hold from address ce = oe = v il , we = v ih -120 -150 t oh 0 0 -- -- ns oe (ce ) high to output float ce = v il , we = v ih 2 -120 -150 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. t df 0 0 45 50 ns t able 8. 28c256t ac e lectrical c haracteristics for p age /b yte e rase and w rite o perations (v cc = 5v 10%, t a = -55 to 125 c unless otherwise specified ) p arameter s ymbol m in 1 t yp m ax u nits address setup time -120 -150 t as 0 0 -- -- -- -- ns ce to write setup time -120 -150 t cs 2 0 0 -- -- -- -- ns we to write setup time -120 -150 t ws 3 0 0 -- -- -- -- ns we hold time -120 -150 t wh 3 0 0 -- -- ns
memory 5 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 we pulse width -120 -150 ce pulse width -120 -150 t wp 2 t cw 3 200 250 200 250 -- -- -- -- -- -- -- -- ns address hold time -120 -150 t ah 150 150 -- -- -- -- ns data setup time -120 -150 t ds 75 100 -- -- -- -- ns data hold time -120 -150 t dh 10 10 -- -- -- -- ns chip enable hold time 2 -120 -150 t ch 0 0 -- -- -- -- ns output enable to write setup time -120 -150 t oes 0 0 -- -- -- -- ns output enable hold time -120 -150 t oeh 0 0 -- -- -- -- ns data latch time 4 -120 -150 t dl -- -- 230 280 -- -- ns write cycle time -120 -150 t wc -- -- -- -- 10 10 ms byte load window 4 -120 -150 t bl -- -- 100 100 -- -- us byte load cycle 4 -120 -150 t blc 0.55 0.55 -- -- 30 30 us write start time -120 -150 t dw 120 150 -- -- -- -- ns 1. use this device in a longer cycle than this value. 2. we controlled operation. 3. ce controlled operation. 4. not tested. t able 8. 28c256t ac e lectrical c haracteristics for p age /b yte e rase and w rite o perations (v cc = 5v 10%, t a = -55 to 125 c unless otherwise specified ) p arameter s ymbol m in 1 t yp m ax u nits
memory 6 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 t able 9. 28c256t m ode s election 1 m ode ce oe we i/o write v il v il v ih d out standby v h xxhigh-z write v il v ih v il d in deselect v il v ih v ih high-z write inhibit x x v ih -- xv il x-- data \ polling v il v il v ih data-out (i/o7) 1. x = does not matter.
memory 7 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 f igure 1. r ead t iming w aveform f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
memory 8 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled ) f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
memory 9 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform
memory 10 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 eeprom a pplication n otes this application note describes the programming procedures for the eeprom modules and the details of various techniques to preserve data protection. automatic page write page-mode write feature allows 1 to 64 bytes of data to be written into the eeprom in a single write cycle, and allows the undefined data within 64 bytes to be written corresponding to the undefined address (a0 to a5). loading the first byte of data, the data load window open s 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s. in case ce and we are kept high for 100(s after data input, eeprom enters erase and write mode automatically and only the input data are wri tten into the eeprom. we ce pin operation during a write cycle, ad dresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if eepr om is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from i/o 7 to indicate that the eeprom is per- forming a write operation. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation. during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancella tion function that cuts noise if its width is 20ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins.
memory 11 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 f28-03 note: all dimensions in inches. 28 p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.165 0.177 0.189 b 0.015 0.017 0.022 c 0.003 0.005 0.009 d -- 0.720 0.740 e 0.380 0.410 0.420 e1 -- -- 0.440 e2 0.180 0.240 -- e3 0.030 0.085 -- e 0.050 bsc l 0.390 0.400 0.410 q 0.040 0.050 0.053 s1 0.005 0.027 -- n28
memory 12 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 d28-03 note: all dimensions in inches. 28 p in r ad -p ak ? d ual i n l ine p ackage s ymbol d imension m in n om m ax a -- 0.177 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 d -- 1.400 1.485 e 0.510 0.595 0.620 ea 0.600 bsc ea/2 0.300 bsc e 0.100 bsc l 0.140 0.150 0.160 q 0.015 0.040 0.060 s1 0.005 0.025 -- s2 0.005 -- -- n28
memory 13 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 important notice: these data sheets are created using the chip manufacturer?s published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.
memory 14 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 256k eeprom (32k x 8-bit) eeprom 28c256t 12.19.01 rev 5 1000584 product ordering options model number feature option details 28c256t xx x x -xx access time screening flow package radiation feature base product nomenclature 12 = 120 ns 15 = 150 ns monolithic s = maxwell class s b = maxwell class b e = engineering (testing @ +25c ) i = industrial (testing @ -55c, +25c, +125c) d = dual in-line package (dip) f = flat pack rp = r ad -p ak ? package rt1 = guaranteed to 10 krad at die level rt2 = guaranteed to 25 krad at die level rt4 = guaranteed to 40 krad at die level 256k eeprom (32k x 8-bit) eeprom

▲Up To Search▲

Price & Availability of 28C256TRPDS12

	To Download 28C256TRPDS12 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .